Planar Hall effect in biosensor with a tilted angle of the cross-junction

A typical planar Hall effect (PHE) sensor junction consists of two Hall bars that the bars appear normal to each other and the junction can have the required four terminals for current and voltage measurements. We are now introducing a tilted angle of the cross-junction and studying the role of the PHE therein. The results show that although there is a tilted angle of the cross-junction, the PHE voltage is remained constant. The result is interpreted by assuming the sensor material with the behavior of a basic single domain structure under the external magnetic field reversals. The calculations of the model are found to be in good concurrence with the experimental results.     

The fractional chromatic number, the Hall ratio, and the lexicographic product

Let χ_f denote the fractional chromatic number and ρ the Hall ratio, and let the lexicographic product of G and H be denoted GlexH. Main results: (i) ρ(GlexH)≤χ_f(G)ρ(H); (ii) if ρ(G)=χ_f(G) then ρ(GlexH)=ρ(G)ρ(H) for all H; (iii) χ_f−ρ is unbounded. In addition, the question of how big χ_f/ρ can be is discussed.     

Spin Hall effect induced by a gravitational field

The experiment by Collela et al. (1975) [1] evidenced in a striking manner how the gravitational field appears in quantum mechanics. Within the modern framework of gauge theories, one can ascribe such effect as due to gauge fields originated from fundamental symmetries of spacetime: local transformations of the Lorentz-Poincaré group. When this gauge principle is applied to the Dirac equation, we obtain kinematical correlations between the gravitational field and the spin of the particles. The phenomenon is similar to the spin Hall effect found in condensed matter systems, although much smaller in magnitude. Actual measurements may require highly precision interferometric techniques with spin-polarized neutrons.     

Distribution of selected monaural acoustical parameters in concert halls

Acoustical parameters calculated from impulse responses are often used to evaluate the characteristics of concert halls. Representative parameters are listed in the Annex of ISO 3382 and the methods of calculation and the minimum number of measurement positions are explained in detail. However, a method for selecting measurement positions is not discussed clearly, because there are wide variations in the characteristics of sound fields. This report provides basic data to solve this problem using spatial distribution characteristics of parameters in halls. Three large-scale measurement campaigns were conducted in which impulse responses were measured at 1427, 180, and 511 locations. Relatively large differences in the obtained parameters compared with well-known difference limens suggest that determining the distributions of parameter values is important. Contour maps are therefore used to display the distributions along with mean values.     

大霍尔系数下电离气体与磁场相互作用规律数值研究

通过洛伦兹力与焦耳热耦合流场N-S方程和电势场泊松方程, 实现对低磁雷诺数磁流体流场的数值模拟, 并考虑霍尔效应和外电路对计算结果的影响. 采用无虚拟时间步的LUSGS预处理BI-CGSTAB算法解决了大霍尔系数下泊松方程病态矩阵求解问题. 对霍尔系数10$^2$的量级的高超声速磁流体圆管绕流和进气道隔离段能量沉积两种现象的数值模拟表明, 外电路、电极冷却措施、等离子体均匀度对电磁力作用效果影响很大.      

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

Finite element solution of heat and mass transfer flow with Hall current, heat source, and viscous dissipation

The aim of the paper is to investigate the effect of heat and mass transfer on the unsteady magnetohydrodynamic free convective flow with Hall current, heat source, and viscous dissipation. The problem is governed by the system of coupled non-linear partial differential equations whose exact solution is difficult to obtain. Therefore, the problem is solved by using the Galerkin finite element method. The effects of the various parameters like Hall current, Eckert number, heat source parameter, Prandtl number, and Schmidt number on the velocity components, the temperature, and the concentration are also examined through graphs.     

Switching the direction of spin accumulation in the spin Hall effect of light by adjusting the optical axis of an uniaxial crystal

We theoretically and experimentally investigate a switchable spin Hall effect (SHE) of light in reflection near the Brewster angle at an air-uniaxial crystal interface. We find a large transverse spin splitting near the Brewster angle, whose sign can be altered by rotating the optical axis. As an analogy of the SHE in an electronic system, a switchable spin accumulation in the SHE of light is detected. We are able to switch the direction of the spin accumulation by adjusting the optical axis angle of the uniaxial crystal. These findings may give opportunities for photon spin manipulating and developing a new generation of nano-photonic devices.     

Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films

This paper reports that the(Ga,Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition.Room-temperature ferromagnetism is observed for the as-grown thin films.The x-ray absorption fine structure characterization reveals that Co 2+ and Ga 3+ ions substitute for Zn 2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin.The ferromagnetic(Ga,Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature.The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.